inchange semiconductor isc product specification isc silicon npn power transistor 2SC4131 description collector-emitter breakdown voltage- : v (br)ceo = 50v(min) low collector saturation voltage- : v ce( sat ) = 0.5v(max)@ i c = 5a applications designed for dc-dc converter, emergency lighting inverter and general purpose applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 15 v i c collector current-continuous 15 a i cp collector current-peak 25 a i b b base current-continuous 4 a p c collector power dissipation @ t c =25 60 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC4131 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 25ma; i b = 0 50 v v ce( sat ) collector-emitter saturation voltage i c = 5a; i b = 80ma b 0.5 v v be( sat ) base-emitter saturation voltage i c = 5a; i b = 80ma b 1.2 v i cbo collector cutoff current v cb = 100v ; i e = 0 10 a i ebo emitter cutoff current v eb = 15v ; i c = 0 10 a h fe dc current gain i c = 5a ; v ce = 1v 60 360 f t current-gain?bandwidth product i e = -1a ; v ce = 12v 18 mhz c ob output capacitance i e =0 ; v cb = 10v; f test = 1.0mhz 210 pf switching times t on turn-on time 0.5 s t stg storage time 2.0 s t f fall time i c = 5a , i b1 = 80ma; i b2 = -80ma r l = 4 ; v cc = 20v 0.4 s isc website www.iscsemi.cn 2
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